Direct diffusion bonding of Ti3SiC2 and Ti3AlC2
文献类型:期刊论文
作者 | Yin, Xiaohui1; Li, Meishuan2; Xu, Jingjun2; Zhang, Jie2; Zhou, Yanchun2 |
刊名 | MATERIALS RESEARCH BULLETIN
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出版日期 | 2009-06-03 |
卷号 | 44期号:6页码:1379-1384 |
关键词 | Carbids Layered compounds Diffusion Microstructure |
ISSN号 | 0025-5408 |
DOI | 10.1016/j.materresbull.2008.12.002 |
通讯作者 | Li, Meishuan(mshli@imr.ac.cn) |
英文摘要 | Two typical layered ternary compounds. Ti3SiC2 and Ti3AlC2, were joined directly by solid-state diffusion bonding method. By various bonding tests at 1100-1300 degrees C for 30-120 min under 10-30 MPa, and characterizing the microstructure and diffusion reactive phases of the joints by scanning electron microscopy (SEM). energy dispersive X-ray spectrometer (EDS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). the optimal condition for direct joining of Ti3SiC2 and Ti3AlC2 was obtained. Strong joints of Ti3SiC2/Ti3AlC2 can be achieved via diffusion bonding, which is attributed to remarkable interdiffusion of Si and Al at the joint interface. The shear strength of the Ti3SiC2/Ti3AlC2 joints was determined. (C) 2008 Elsevier Ltd. All rights reserved. |
资助项目 | National Science Foundation of China[50771099] |
WOS研究方向 | Materials Science |
语种 | 英语 |
WOS记录号 | WOS:000265906600032 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
资助机构 | National Science Foundation of China |
源URL | [http://ir.imr.ac.cn/handle/321006/97071] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Li, Meishuan |
作者单位 | 1.Anhui Univ Technol, Sch Mat Sci & Engn, Maanshan 243002, Anhui, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning Prov, Peoples R China |
推荐引用方式 GB/T 7714 | Yin, Xiaohui,Li, Meishuan,Xu, Jingjun,et al. Direct diffusion bonding of Ti3SiC2 and Ti3AlC2[J]. MATERIALS RESEARCH BULLETIN,2009,44(6):1379-1384. |
APA | Yin, Xiaohui,Li, Meishuan,Xu, Jingjun,Zhang, Jie,&Zhou, Yanchun.(2009).Direct diffusion bonding of Ti3SiC2 and Ti3AlC2.MATERIALS RESEARCH BULLETIN,44(6),1379-1384. |
MLA | Yin, Xiaohui,et al."Direct diffusion bonding of Ti3SiC2 and Ti3AlC2".MATERIALS RESEARCH BULLETIN 44.6(2009):1379-1384. |
入库方式: OAI收割
来源:金属研究所
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