An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
文献类型：期刊论文
| 作者 | Wang, X. L.2,3; Chen, T. S.1; Xiao, H. L.2,3; Tang, J.2,3; Ran, J. X.2,3; Zhang, M. L.2,3; Feng, C.2,3; Hou, Q. F.2,3; Wei, M.2,3; Jiang, L. J.2,3 |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2009-03-01 |
| 卷号 | 53期号:3页码:332-335 |
| 关键词 | AlGaN/AlN/GaN HEMT MOCVD SiC substrate Power device |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2009.01.003 |
| 通讯作者 | Wang, X. L.(xlwang@semi.ac.cn) |
| 英文摘要 | Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved. |
| 资助项目 | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60576046] ; National Nature Sciences Foundation of China[60606002] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[513270605] |
| WOS研究方向 | Engineering ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000264731300015 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/97339]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, X. L. |
| 作者单位 | 1.Nanjing Electron Devices Inst, Nanjing 210016, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, X. L.,Chen, T. S.,Xiao, H. L.,et al. An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application[J]. SOLID-STATE ELECTRONICS,2009,53(3):332-335. |
| APA | Wang, X. L..,Chen, T. S..,Xiao, H. L..,Tang, J..,Ran, J. X..,...&Wang, Z. G..(2009).An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application.SOLID-STATE ELECTRONICS,53(3),332-335. |
| MLA | Wang, X. L.,et al."An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application".SOLID-STATE ELECTRONICS 53.3(2009):332-335. |
入库方式： OAI收割
来源：金属研究所
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