Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar
文献类型：期刊论文
| 作者 | Cheng, Hua1,2; Wu, Aimin3; Xiao, Jinquan1; Shi, Nanlin1; Wen, Lishi1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2009-07-01 |
| 卷号 | 25期号:4页码:489-491 |
| 关键词 | Poly-Si films ECR-PECVD Substrate temperature Ar-dilution |
| ISSN号 | 1005-0302 |
| 通讯作者 | Wu, Aimin(aimin@dlut.edu.cn) |
| 英文摘要 | Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H-2 dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200 degrees C, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate. |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000268775200014 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 源URL | [http://ir.imr.ac.cn/handle/321006/97646]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wu, Aimin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.PLA, Armor Tech Inst, Changchun 130117, Peoples R China 3.Dalian Univ Technol, Dalian 116024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cheng, Hua,Wu, Aimin,Xiao, Jinquan,et al. Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2009,25(4):489-491. |
| APA | Cheng, Hua,Wu, Aimin,Xiao, Jinquan,Shi, Nanlin,&Wen, Lishi.(2009).Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,25(4),489-491. |
| MLA | Cheng, Hua,et al."Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 25.4(2009):489-491. |
入库方式： OAI收割
来源：金属研究所
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