Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser
文献类型：期刊论文
| 作者 | Zhao, Songqing2; Liu, Wenwei2; Yang, Limin2; Zhao, Kun1,2; Liu, Hao2; Zhou, Na2; Wang, Aijun2; Zhou, Yueliang3; Zhou, Qingli4; Shi, Yulei4 |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2009-09-21 |
| 卷号 | 42期号:18页码:4 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/42/18/185101 |
| 通讯作者 | Zhao, Songqing(zhaosongqing@yahoo.com.cn) |
| 英文摘要 | B-doped ZnO thin films were observed to have a lateral laser-induced photovoltaic effect: the saturation value varied very linearly with the 10.6 mu m constant laser spot position between the electrodes on the ZnO surface. It was found that the temperature gradient in the direction of electron transfer (along the film surface) due to the laser spot causes this photovoltage signal to be linearly dependent on the position of the laser spot in this isotropic system. This linearity is expected to make ZnO a candidate for position-sensitive photodetectors. |
| 资助项目 | National Natural Science Foundation of China[60877038] ; National Natural Science Foundation of China[50672132] ; National Natural Science Foundation of China[60778034] ; National Natural Science Foundation of China[10804077] ; Beijing Natural Science Foundation[4082026] ; programme for New Century Excellent Talents in University (NCET) ; Research Fund for the Doctoral Program of Higher Education |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000269557000022 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China ; Beijing Natural Science Foundation ; programme for New Century Excellent Talents in University (NCET) ; Research Fund for the Doctoral Program of Higher Education |
| 源URL | [http://ir.imr.ac.cn/handle/321006/98179]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhao, Songqing |
| 作者单位 | 1.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 2.China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China 3.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China 4.Capital Normal Univ, Dept Phys, Key Lab Terahertz Optoelect, Beijing Key Lab Terahertz Spect & Imaging,Minist, Beijing 100048, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Songqing,Liu, Wenwei,Yang, Limin,et al. Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18):4. |
| APA | Zhao, Songqing.,Liu, Wenwei.,Yang, Limin.,Zhao, Kun.,Liu, Hao.,...&Shi, Yulei.(2009).Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18),4. |
| MLA | Zhao, Songqing,et al."Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009):4. |
入库方式： OAI收割
来源：金属研究所
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