Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
文献类型：期刊论文
| 作者 | Zhang, M. L.1; Wang, X. L.1,2; Xiao, H. L.1; Wang, C. M.1; Yang, C. B.1; Tang, J.1; Feng, C.1; Jiang, L. J.1; Hu, G. X.1; Ran, J. X.1 |
| 刊名 | SUPERLATTICES AND MICROSTRUCTURES
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 45期号:2页码:54-59 |
| 关键词 | AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance |
| ISSN号 | 0749-6036 |
| DOI | 10.1016/j.spmi.2008.11.028 |
| 通讯作者 | Zhang, M. L.(mlzhang@semi.ac.cn) |
| 英文摘要 | AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer is grown on C-plane sapphire by metal organic vapor deposition (MOCVD). Compared with the conventional Si-doped structure, electrical property is improved. An average sheet resistance of 287.1 Omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent Al composition of 38%. Hall measurement shows that the mobility of two-dimensional electron gas (2DEG) is 1852 cm(2)/V s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. The root mean square roughness (RMS) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. The reason for the property improvement is discussed. (c) 2008 Elsevier Ltd. All rights reserved. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000263616500002 |
| 出版者 | ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
| 源URL | [http://ir.imr.ac.cn/handle/321006/99456]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, M. L. |
| 作者单位 | 1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, M. L.,Wang, X. L.,Xiao, H. L.,et al. Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer[J]. SUPERLATTICES AND MICROSTRUCTURES,2009,45(2):54-59. |
| APA | Zhang, M. L..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Yang, C. B..,...&Wang, ZH. G..(2009).Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer.SUPERLATTICES AND MICROSTRUCTURES,45(2),54-59. |
| MLA | Zhang, M. L.,et al."Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer".SUPERLATTICES AND MICROSTRUCTURES 45.2(2009):54-59. |
入库方式： OAI收割
来源：金属研究所
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