中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Unipolar resistive switching effect in YMn1-delta O3 thin films

文献类型:期刊论文

作者Yan, Z. B.1; Li, S. Z.; Wang, K. F.; Liu, J. -M.
刊名APPLIED PHYSICS LETTERS
出版日期2010-01-04
卷号96期号:1页码:3
关键词electric resistance ferroelectric materials ferroelectric switching fracture insulating thin films MIM structures platinum Poole-Frenkel effect yttrium compounds
ISSN号0003-6951
DOI10.1063/1.3280380
通讯作者Yan, Z. B.()
英文摘要Steady unipolar resistive switching of Pt/YMn1-delta O3/Pt MIM structure is investigated. High resistance ratio (>10(4)) of high resistance state (HRS) over low resistance state (LRS) and long retention (>10(5) s) are achieved. It is suggested that the Joule heating and Poole-Frenkel effect dominate respectively the conduction of the LRS and HRS in high electric field region. The resistive switching is explained by the rupture and formation of conductive filaments in association with the local Joule-heat-induced redox inside YMn1-delta O3.
资助项目Natural Science Foundation of China[50832002] ; Natural Science Foundation of China[10874075] ; National Key Projects for Basic Researches of China[2006CB921802] ; National Key Projects for Basic Researches of China[2009CB623303] ; Jiangsu Province, China[BK2008024]
WOS研究方向Physics
语种英语
WOS记录号WOS:000273473200019
出版者AMER INST PHYSICS
资助机构Natural Science Foundation of China ; National Key Projects for Basic Researches of China ; Jiangsu Province, China
源URL[http://ir.imr.ac.cn/handle/321006/99863]  
专题金属研究所_中国科学院金属研究所
通讯作者Yan, Z. B.
作者单位1.Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Yan, Z. B.,Li, S. Z.,Wang, K. F.,et al. Unipolar resistive switching effect in YMn1-delta O3 thin films[J]. APPLIED PHYSICS LETTERS,2010,96(1):3.
APA Yan, Z. B.,Li, S. Z.,Wang, K. F.,&Liu, J. -M..(2010).Unipolar resistive switching effect in YMn1-delta O3 thin films.APPLIED PHYSICS LETTERS,96(1),3.
MLA Yan, Z. B.,et al."Unipolar resistive switching effect in YMn1-delta O3 thin films".APPLIED PHYSICS LETTERS 96.1(2010):3.

入库方式: OAI收割

来源:金属研究所

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