中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates

文献类型:期刊论文

作者Sun Guo-Sheng1,2; Liu Xing-Fang1,2; Wang Lei1; Zhao Wan-Shun1; Yang Ting1; Wu Hai-Lei1; Yan Guo-Guo1; Zhao Yong-Mei3; Ning Jin3; Zeng Yi-Ping1,2
刊名CHINESE PHYSICS B
出版日期2010-08-01
卷号19期号:8页码:5
关键词3C-SiC heteroepitaxial multi-wafer uniformity
ISSN号1674-1056
通讯作者Sun Guo-Sheng(gshsun@red.semi.ac.cn)
英文摘要Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH(3) doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.
资助项目National Natural Science Foundation of China[60876003] ; National Natural Science Foundation of China[60606003] ; Chinese Academy of Sciences[yz200702]
WOS研究方向Physics
语种英语
WOS记录号WOS:000280741800091
出版者IOP PUBLISHING LTD
资助机构National Natural Science Foundation of China ; Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/101281]  
专题金属研究所_中国科学院金属研究所
通讯作者Sun Guo-Sheng
作者单位1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
3.Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Sun Guo-Sheng,Liu Xing-Fang,Wang Lei,et al. Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates[J]. CHINESE PHYSICS B,2010,19(8):5.
APA Sun Guo-Sheng.,Liu Xing-Fang.,Wang Lei.,Zhao Wan-Shun.,Yang Ting.,...&Li Jin-Min.(2010).Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates.CHINESE PHYSICS B,19(8),5.
MLA Sun Guo-Sheng,et al."Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates".CHINESE PHYSICS B 19.8(2010):5.

入库方式: OAI收割

来源:金属研究所

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