Synthesis of GaPO4-GaN Coaxial Nanowires
文献类型：期刊论文
| 作者 | Fu, Lutang; Chen, Zhigang; Cong, Hongtao |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2010 |
| 卷号 | 26期号:1页码:15-19 |
| 关键词 | GaN GaPO4 Coaxial nanowires |
| ISSN号 | 1005-0302 |
| 通讯作者 | Cong, Hongtao(htcong@imr.ac.cn) |
| 英文摘要 | GaPO4-GaN coaxial nanowires were synthesized by two-step chemical vapor deposition method using H-2 and NH3 as reactant gas in turn at 950 degrees C. The morphology and microstructures of the GaPO4-GaN coaxial nanowires were studied by scanning elctron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The nanowires have an average diameter of similar to 15 nm and length of hundreds of nanometers. The core is GaPO4 crystal and the outer shell is GaN crystal. The formation mechanism was discussed and the key factors controlling the growth are temperature and the concentration of reactant gases. These coaxial nanowires may have potential application for piezoluminescence nano-devices, and the two-step synthetic technique could be used to grow rationally other 1D GaN-based nanowire heterostructures. |
| 资助项目 | Ministry of Science and Technology of China[2009CB220001] ; Australian Research Council |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000274489800002 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 资助机构 | Ministry of Science and Technology of China ; Australian Research Council |
| 源URL | [http://ir.imr.ac.cn/handle/321006/102383]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Cong, Hongtao |
| 作者单位 | Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, Lutang,Chen, Zhigang,Cong, Hongtao. Synthesis of GaPO4-GaN Coaxial Nanowires[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2010,26(1):15-19. |
| APA | Fu, Lutang,Chen, Zhigang,&Cong, Hongtao.(2010).Synthesis of GaPO4-GaN Coaxial Nanowires.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,26(1),15-19. |
| MLA | Fu, Lutang,et al."Synthesis of GaPO4-GaN Coaxial Nanowires".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 26.1(2010):15-19. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。