Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhao, Jie1,2; Zeng, Yiping1,2; Liu, Chao1,2; Cui, Lijie1,2; Li, Yanbo1,2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2010-09-01 |
| 卷号 | 256期号:22页码:6881-6886 |
| 关键词 | ZnTe Molecular beam epitaxy Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2010.04.105 |
| 通讯作者 | Zhao, Jie(jiezhao@semi.ac.cn) |
| 英文摘要 | ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R(VI/II)) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R(VI/II) to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R(VI/II) of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R(VI/II). The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R(VI/II) of 4.0 and then increases at higher ratios. It is suggested that the most suitable R(VI/II) be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films. (C) 2010 Elsevier B. V. All rights reserved. |
| 资助项目 | Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences[09S1010001] ; National Natural Science Foundation of China[0913120000] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000278908900066 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | Knowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences ; National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/102701]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhao, Jie |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2010,256(22):6881-6886. |
| APA | Zhao, Jie,Zeng, Yiping,Liu, Chao,Cui, Lijie,&Li, Yanbo.(2010).Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,256(22),6881-6886. |
| MLA | Zhao, Jie,et al."Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 256.22(2010):6881-6886. |
入库方式： OAI收割
来源：金属研究所
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