First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase
文献类型：期刊论文
| 作者 | Huang, H. M.1; Luo, S. J.1; Yao, K. L.2,3 |
| 刊名 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
 |
| 出版日期 | 2011-05-01 |
| 卷号 | 248期号:5页码:1258-1263 |
| ISSN号 | 0370-1972 |
| 关键词 | dilute magnetic semiconductors density functional theory electron density of states GaCrP |
| DOI | 10.1002/pssb.201046470 |
| 通讯作者 | Huang, H. M.(smilehhm@163.com) |
| 英文摘要 | We employ the full potential linearized augmented plane wave (FP-LAPW) method based on spin-polarized density functional theory (DFT) in order to investigate the structural, electronic, and magnetic properties of ordered dilute magnetic semiconductor (DMS) Ga1-xCrxP in zinc-blende phase. The calculated electronic band structures and density of states of these DMSs are discussed. The results show that the ferromagnetic states are more favorable in energy than antiferromagnetic states. Ga1-xCrxP for x = 0.125, 0.25, and 0.50 exhibits half-metallic (HM) characteristic with integral magnetic moment, and the sensitivity of half-metallicity of Ga1-xCrxP as a function of lattice constant is also discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 资助项目 | National Natural Science Foundation of China[10974048] ; Excellent Middle Age and the Youth People Science and Technology Creative Team Foundation of the Educational Department of the Hubei Province[T200805] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | WILEY-BLACKWELL |
| WOS记录号 | WOS:000289997700043 |
| 资助机构 | National Natural Science Foundation of China ; Excellent Middle Age and the Youth People Science and Technology Creative Team Foundation of the Educational Department of the Hubei Province |
| 源URL | [http://ir.imr.ac.cn/handle/321006/103480]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Huang, H. M. |
| 作者单位 | 1.Hubei Univ Automot Technol, Sch Sci, Shiyan 442002, Peoples R China 2.Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China 3.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, H. M.,Luo, S. J.,Yao, K. L.. First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2011,248(5):1258-1263. |
| APA | Huang, H. M.,Luo, S. J.,&Yao, K. L..(2011).First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,248(5),1258-1263. |
| MLA | Huang, H. M.,et al."First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248.5(2011):1258-1263. |
入库方式： OAI收割
来源：金属研究所
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