Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods
文献类型：期刊论文
| 作者 | Chen, Q.2,3; Lu, T.2,3; Xu, M.4,5; Meng, C.6; Hu, Y.2,3; Sun, K.7,8; Shlimak, I.1,9 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011-02-14 |
| 卷号 | 98期号:7页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3553770 |
| 通讯作者 | Chen, Q.() |
| 英文摘要 | Uniform Ge-nanocrystals (Ge-ncs) embedded in amorphous SiO2 film were formed by using Ge-74(+) ion implantation and neutron transmutation doping (NTD) method. Both experimental and theoretical results indicate that the existence of As dopants transmuted from Ge-74 by NTD tunes the already stabilized (crystallized) system back to a metastable state and then activates the mass transfer processes during the transition form this metastable state back to the stable (crystallized) state, and hence the nanocrystal size uniformity and higher volume density of Ge-ncs. This method has the potential to open a route in the three-dimensional nanofabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553770] |
| 资助项目 | NASF of NSFC-CAEP of China[10376020] ; Program for New Century Excellent Talents in University[NCET-04-0874] ; Sichuan Youth Science & Technology Foundation, China[08ZQ026-025] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000287507200059 |
| 出版者 | AMER INST PHYSICS |
| 资助机构 | NASF of NSFC-CAEP of China ; Program for New Century Excellent Talents in University ; Sichuan Youth Science & Technology Foundation, China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/103692]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Chen, Q. |
| 作者单位 | 1.Bar Ilan Univ, Dept Phys, Minerva Ctr, IL-52900 Ramat Gan, Israel 2.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China 3.Sichuan Univ, Key Lab Radiat Phys & Technol Minist Educ, Chengdu 610064, Peoples R China 4.Sichuan Normal Univ, Inst Solid State Phys, Chengdu 610068, Peoples R China 5.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 6.China Acad Engn Phys, Inst Fluid Phys, Key Lab Shock Wave & Detonat Phys Res, Mianyang 621900, Peoples R China 7.Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA 8.Univ Michigan, Elect Microbeam Anal Lab, Ann Arbor, MI 48109 USA 9.Bar Ilan Univ, Jack & Pearl Resnick Inst Adv Technol, IL-52900 Ramat Gan, Israel |
| 推荐引用方式 GB/T 7714 | Chen, Q.,Lu, T.,Xu, M.,et al. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods[J]. APPLIED PHYSICS LETTERS,2011,98(7):3. |
| APA | Chen, Q..,Lu, T..,Xu, M..,Meng, C..,Hu, Y..,...&Shlimak, I..(2011).Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods.APPLIED PHYSICS LETTERS,98(7),3. |
| MLA | Chen, Q.,et al."Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods".APPLIED PHYSICS LETTERS 98.7(2011):3. |
入库方式： OAI收割
来源：金属研究所
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