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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

文献类型：期刊论文

作者Sun Guo-Sheng1,2,3; Liu Xing-Fang1; Wu Hai-Lei1; Yan Guo-Guo1; Dong Lin1; Zheng Liu1; Zhao Wan-Shun1; Wang Lei1; Zeng Yi-Ping1,2; Li Xi-Guang3
刊名CHINESE PHYSICS B
出版日期2011-03-01
卷号20期号:3页码:6
关键词4H-SiC Raman scattering LOPC modes transport properties
ISSN号1674-1056
DOI10.1088/1674-1056/20/3/033301
通讯作者Sun Guo-Sheng(gshsun@red.semi.ac.cn)
英文摘要The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2 x 10(18) cm(-3) and 8x10(18) cm(-3) with a carrier mobility of 30-55 cm(2)/(V.s) for n-type 4H-SiC substrates and 1 x 10(16) -3 x 10(16) cm(-3) with mobility of 290-490 cm(2)/(V.s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1 x 10(16) cm(-3) with mobility of 380 cm(2)/(V.s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.
资助项目National Natural Science Foundation of China[60876003] ; Chinese Academy of Sciences[Y072011000] ; Chinese Academy of Sciences[ISCAS2008T04] ; State Grid Corporation of China[ZL71-09-001]
WOS研究方向Physics
语种英语
WOS记录号WOS:000289939700027
出版者IOP PUBLISHING LTD
资助机构National Natural Science Foundation of China ; Chinese Academy of Sciences ; State Grid Corporation of China
源URL[http://ir.imr.ac.cn/handle/321006/103797]  
专题金属研究所_中国科学院金属研究所
通讯作者Sun Guo-Sheng
作者单位1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
3.Dongguan Tianyu Semicond Inc, Dongguan 523000, Peoples R China
推荐引用方式
GB/T 7714		 Sun Guo-Sheng,Liu Xing-Fang,Wu Hai-Lei,et al. Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement[J]. CHINESE PHYSICS B,2011,20(3):6.
APA Sun Guo-Sheng.,Liu Xing-Fang.,Wu Hai-Lei.,Yan Guo-Guo.,Dong Lin.,...&Wang Zhan-Guo.(2011).Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.CHINESE PHYSICS B,20(3),6.
MLA Sun Guo-Sheng,et al."Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement".CHINESE PHYSICS B 20.3(2011):6.

入库方式： OAI收割

来源：金属研究所

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