中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method

文献类型:期刊论文

作者Wang, X. W.; Zhang, Y. Q.1; Meng, H.; Wang, Z. J.; Zhang, Z. D.
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2011-07-21
卷号509期号:29页码:7803-7807
ISSN号0925-8388
关键词CoFe2O4 Thin films Sol-gel method Magnetic anisotropy
DOI10.1016/j.jallcom.2011.05.021
通讯作者Zhang, Y. Q.(yqzhang@imr.ac.cn)
英文摘要Cobalt ferrite CoFe2O4 films were fabricated on SiO2/Si(1 0 0) by the sol-gel method. Films crystallized at/above 600 degrees C are stoichiometric as expected. With increase of the annealing temperature from 600 degrees C to 750 degrees C, the columnar grain size of CoFe2O4 film increases from 13 nm to 50 nm, resulting in surface roughness increasing from 0.46 nm to 2.55 nm. Magnetic hysteresis loops in both in-plane and out-of-plane directions, at different annealing temperatures, indicate that the films annealed at 750 degrees C exhibit obvious perpendicular magnetic anisotropy. Simultaneously, with the annealing temperature increasing from 600 degrees C to 750 degrees C, the out of plane coercivity increases from 1 kOe to 2.4 kOe and the corresponding saturation magnetization increases from 200 emu/cm(3) to 283 emu/cm(3). In addition, all crystallized films exhibit cluster-like structured magnetic domains. (C) 2011 Elsevier B.V. All rights reserved.
资助项目Chinese Academy of Sciences ; National Natural Science Foundation of China[50802098] ; National Natural Science Foundation of China[51072202] ; Ministry of Science and Technology of China[2010CB934603]
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000291473500030
资助机构Chinese Academy of Sciences ; National Natural Science Foundation of China ; Ministry of Science and Technology of China
源URL[http://ir.imr.ac.cn/handle/321006/103949]  
专题金属研究所_中国科学院金属研究所
通讯作者Zhang, Y. Q.
作者单位1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Wang, X. W.,Zhang, Y. Q.,Meng, H.,et al. Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(29):7803-7807.
APA Wang, X. W.,Zhang, Y. Q.,Meng, H.,Wang, Z. J.,&Zhang, Z. D..(2011).Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method.JOURNAL OF ALLOYS AND COMPOUNDS,509(29),7803-7807.
MLA Wang, X. W.,et al."Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method".JOURNAL OF ALLOYS AND COMPOUNDS 509.29(2011):7803-7807.

入库方式: OAI收割

来源:金属研究所

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