中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 金属研究所
  3. 中国科学院金属研究所
An investigation on InxGa1-xN/GaN multiple quantum well solar cells

文献类型：期刊论文

作者Deng, Qingwen1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,3; Wang, Cuimei1,3; Yin, Haibo1,3; Chen, Hong1,3; Hou, Qifeng1; Lin, Defeng1; Li, Jinmin1,2,3; Wang, Zhanguo3
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2011-07-06
卷号44期号:26页码:6
ISSN号0022-3727
DOI10.1088/0022-3727/44/26/265103
通讯作者Deng, Qingwen(daven@semi.ac.cn)
英文摘要The conversion efficiency of InxGa1-xN/GaN multiple quantum well solar cells is originally investigated in theory based on the ideal diode model and the ideal unity quantum well model. The results reveal that the conversion efficiency partially depends on the width of the quantum well and the thickness of the barrier region but is dominated by the number of quantum wells and indium content of InxGa1-xN. The calculated results are found to be basically trustworthy by comparing with reported experimental results. An In0.15Ga0.85N/GaN multiple quantum well solar cell is successfully fabricated with a conversion efficiency of 0.2%. The main discrepancy between calculated and experimental results is the material quality and manufacturing technology which need to be improved.
资助项目Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503]
WOS研究方向Physics
语种英语
WOS记录号WOS:000291685100010
出版者IOP PUBLISHING LTD
资助机构Chinese Academy of Sciences ; National Natural Science Foundation of China ; State Key Development Program for Basic Research of China
源URL[http://ir.imr.ac.cn/handle/321006/104128]  
专题金属研究所_中国科学院金属研究所
通讯作者Deng, Qingwen
作者单位1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
3.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714		 Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. An investigation on InxGa1-xN/GaN multiple quantum well solar cells[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(26):6.
APA Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).An investigation on InxGa1-xN/GaN multiple quantum well solar cells.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(26),6.
MLA Deng, Qingwen,et al."An investigation on InxGa1-xN/GaN multiple quantum well solar cells".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.26(2011):6.

入库方式： OAI收割

来源：金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。