Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang, X.1; Zhu, Y. L.1; He, M.2; Lu, H. B.2; Ma, X. L.1 |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2011-02-01 |
| 卷号 | 59期号:4页码:1644-1650 |
| ISSN号 | 1359-6454 |
| 关键词 | Thin films High-resolution electron microscopy Energy-filtered transmission microscopy Interface Dielectrics |
| DOI | 10.1016/j.actamat.2010.11.031 |
| 通讯作者 | Zhu, Y. L.(ylzhu@imr.ac.cn) |
| 英文摘要 | Erbium oxide (Er2O3) films are well regarded as being suited for high-k replacement of SiO2 in endeavors to further miniaturize and enhance the performance of microelectronics. Er2O3 films were deposited on Si (0 0 1) substrates by laser molecular beam epitaxy. The structures and microstructures of the films and the interfacial layers were characterized by means of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results from the XRD and selected area electron diffractions of Er2O3 films with thicknesses of 30 and 100 nm indicate that the films are polycrystalline, with dominant (1 1 1) textures of Er2O3 (1 1 1) // Si (0 0 1). Amorphous layers dotted with small ordered islands were observed and confirmed to be located at the interfaces between the films and the Si substrates with dark-field image and high-resolution TEM. High-resolution Z-contrast imaging, energy dispersive X-ray spectroscopy and energy-filtered imaging were applied to identify the compositions of the interfacial layers. The salient feature is that the layers consist primarily of Er and O, with a very small amount of Si. This kind of Er-O-based interface layer may play a very important role in the electrical and optical properties of the films. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 资助项目 | National Basic Research Program of China[2009CB623705] ; National Natural Science Foundation of China[50871115] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000287265100032 |
| 资助机构 | National Basic Research Program of China ; National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/104677]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhu, Y. L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, X.,Zhu, Y. L.,He, M.,et al. Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy[J]. ACTA MATERIALIA,2011,59(4):1644-1650. |
| APA | Wang, X.,Zhu, Y. L.,He, M.,Lu, H. B.,&Ma, X. L..(2011).Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy.ACTA MATERIALIA,59(4),1644-1650. |
| MLA | Wang, X.,et al."Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy".ACTA MATERIALIA 59.4(2011):1644-1650. |
入库方式： OAI收割
来源：金属研究所
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