Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yang, Qiumin1,2; Zhao, Jie1,2; Guan, Min1,2; Liu, Chao1,2; Cui, Lijie1,2; Han, Dejun3; Zeng, Yiping1,2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2011-08-15 |
| 卷号 | 257期号:21页码:9038-9043 |
| 关键词 | CdSe Molecular beam epitaxy Reflection high energy electron diffraction X-ray diffraction Atomic force microscopy |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2011.05.096 |
| 通讯作者 | Zeng, Yiping(ypzeng@red.semi.ac.cn) |
| 英文摘要 | CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 degrees C shows a polycrystalline structure with rough surface. As the temperature increases over 300 degrees C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 degrees C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal Xray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 degrees C were annealed in air for 30 min to study the films' thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 degrees C, meaning a good thermal stability of the cubic CdSe epilayers. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved. |
| 资助项目 | Knowledge Innovation Program Foundation of Institute of semiconductors, CAS[09S1010001] ; National Natural Science Foundation of China[0913120000] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000292539700046 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | Knowledge Innovation Program Foundation of Institute of semiconductors, CAS ; National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/105239]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zeng, Yiping |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Beijing Normal Univ, Coll Nucl Sci & Technol, Beijing 100875, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Qiumin,Zhao, Jie,Guan, Min,et al. Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(21):9038-9043. |
| APA | Yang, Qiumin.,Zhao, Jie.,Guan, Min.,Liu, Chao.,Cui, Lijie.,...&Zeng, Yiping.(2011).Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,257(21),9038-9043. |
| MLA | Yang, Qiumin,et al."Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 257.21(2011):9038-9043. |
入库方式： OAI收割
来源：金属研究所
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