High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films
文献类型：期刊论文
| 作者 | Zhang, Feng1,2; Sun, Guosheng1,2; Huang, Huolin3; Wu, Zhengyun3; Wang, Lei2; Zhao, Wanshun2; Liu, Xingfang2; Yan, Guoguo2; Zheng, Liu2; Dong, Lin2 |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2011-12-01 |
| 卷号 | 32期号:12页码:1722-1724 |
| 关键词 | Metal-insulator-semiconductor (MIS) devices photodetectors ultraviolet (UV) detectors |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2011.2168597 |
| 通讯作者 | Zhang, Feng(fzhang@semi.ac.cn) |
| 英文摘要 | 4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO2 and evaporated Al2O3/SiO2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of 3.25 x 10(-10) and 9.75 x 10(-9) A/cm(2) and high UV-to-visible rejection ratios of > 2 x 10(3) have been achieved at 10 V. The peak responsivities of these devices were separately 30 mA/W at 260 nm and 50 mA/W at 270 nm at 10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits. |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000297352500025 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.imr.ac.cn/handle/321006/105423]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Feng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Feng,Sun, Guosheng,Huang, Huolin,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(12):1722-1724. |
| APA | Zhang, Feng.,Sun, Guosheng.,Huang, Huolin.,Wu, Zhengyun.,Wang, Lei.,...&Zeng, Yiping.(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films.IEEE ELECTRON DEVICE LETTERS,32(12),1722-1724. |
| MLA | Zhang, Feng,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films".IEEE ELECTRON DEVICE LETTERS 32.12(2011):1722-1724. |
入库方式： OAI收割
来源：金属研究所
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