Stable organic solar cells employing MoO3-doped copper phthalocyanine as buffer layer
文献类型：期刊论文
| 作者 | Cao, Guohua1; Li, Linsen1; Guan, Min1; Zhao, Jie2; Li, Yiyang2; Zeng, Yiping2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2011-09-01 |
| 卷号 | 257期号:22页码:9382-9385 |
| 关键词 | Organic solar cells MoO3-doped CuPc film Buffer layers Surface morphology |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2011.05.120 |
| 通讯作者 | Guan, Min(guanmin@semi.ac.cn) |
| 英文摘要 | A stable organic solar cell with structure of ITO/buffer/donor/acceptor/cathode is presented. A thin layer (5 nm) of MoO3-doped CuPc is adopted as the buffer in CuPc/C-60 organic heterojunction photovoltaic (PV) solar cells, resulting in two times longer lifetime. The surface morphology of buffer layer plays a decisive role in improving the stability. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved. |
| 资助项目 | National Natural Science Foundation of China[NNSFC 60876043] ; Chinese Academy of Sciences[ISCAS2008T13] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000293590300026 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China ; Chinese Academy of Sciences |
| 源URL | [http://ir.imr.ac.cn/handle/321006/105918]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Guan, Min |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao, Guohua,Li, Linsen,Guan, Min,et al. Stable organic solar cells employing MoO3-doped copper phthalocyanine as buffer layer[J]. APPLIED SURFACE SCIENCE,2011,257(22):9382-9385. |
| APA | Cao, Guohua,Li, Linsen,Guan, Min,Zhao, Jie,Li, Yiyang,&Zeng, Yiping.(2011).Stable organic solar cells employing MoO3-doped copper phthalocyanine as buffer layer.APPLIED SURFACE SCIENCE,257(22),9382-9385. |
| MLA | Cao, Guohua,et al."Stable organic solar cells employing MoO3-doped copper phthalocyanine as buffer layer".APPLIED SURFACE SCIENCE 257.22(2011):9382-9385. |
入库方式： OAI收割
来源：金属研究所
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