Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
文献类型：期刊论文
| 作者 | Li Hui1; Zhou Kai1; Pang Jingbiao1; Shao Yundong1; Wang Zhu1; Zhao Youwen2 |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2011-07-07 |
| 卷号 | 26期号:7页码:6 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/26/7/075016 |
| 通讯作者 | Li Hui() |
| 英文摘要 | Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (V-Ga)-related defects. More V-Ga-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 x 10(17) cm(-2) and 1.0 x 10(18) cm(-2); however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of VGa. The role of Te content in the defect evolution is also discussed. |
| 资助项目 | Natural Science Foundation of China[10775107] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000289554400017 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/106517]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li Hui |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Hui,Zhou Kai,Pang Jingbiao,et al. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):6. |
| APA | Li Hui,Zhou Kai,Pang Jingbiao,Shao Yundong,Wang Zhu,&Zhao Youwen.(2011).Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(7),6. |
| MLA | Li Hui,et al."Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.7(2011):6. |
入库方式： OAI收割
来源：金属研究所
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