EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal
文献类型：期刊论文
| 作者 | Feng, W. L.1,3,5; Li, X. M.1; Zheng, W. C.2,5; Yang, Y. G.2; Yang, W. Q.4 |
| 刊名 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
 |
| 出版日期 | 2011-03-01 |
| 卷号 | 323期号:5页码:528-531 |
| 关键词 | Electron paramagnetic resonance Crystal- and ligand-field theory Defect structure Ni+ Cu2+ CuGaSe2 |
| ISSN号 | 0304-8853 |
| DOI | 10.1016/j.jmmm.2010.10.003 |
| 通讯作者 | Feng, W. L.(wenlinfeng@126.com) |
| 英文摘要 | The EPR g factors, g(parallel to) and g(perpendicular to), for the isoelectronic 3d(9) ions Ni+ and Cu2+ at the tetragonal Cu+ site of the CuGaSe2 crystal are calculated from the high-order perturbation formulas based on a two-spin-orbit-parameter model. In the model, both the contributions to g factors from the spin-orbit parameter of central 3d(9) ion and that of ligand ion are contained. The calculated results appear to be consistent with the experimental values. The tetragonal distortions (characterized by theta - theta(0), where theta is the angle between the metal-ligand bond and C-4 axis, and theta(0)approximate to E54.74 degrees is the same angle in cubic symmetry) of Ni+ and Cu2+ centers, which are different from the corresponding angle in the host CuGaSe2 crystal and from impurity to impurity, are obtained from the calculations. The difference of the sign of g(parallel to) - g(perpendicular to) between the isoelectronic Ni+ and Cu2+ centers is found to be due to the different tetragonal distortions of both centers in the CuGaSe2 crystal. (C) 2010 Elsevier B.V. All rights reserved. |
| 资助项目 | National Science Foundation for Post-doctoral Scientists of China[20100470810] ; Natural Science Foundation from the Education Commission of Chongqing, China[KJ090608] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000284626800028 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Science Foundation for Post-doctoral Scientists of China ; Natural Science Foundation from the Education Commission of Chongqing, China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/107020]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Feng, W. L. |
| 作者单位 | 1.Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China 2.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 3.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China 4.Chengdu Univ Informat & Technol, Dept Opt & Elect, Chengdu 610225, Peoples R China 5.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, W. L.,Li, X. M.,Zheng, W. C.,et al. EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2011,323(5):528-531. |
| APA | Feng, W. L.,Li, X. M.,Zheng, W. C.,Yang, Y. G.,&Yang, W. Q..(2011).EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,323(5),528-531. |
| MLA | Feng, W. L.,et al."EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 323.5(2011):528-531. |
入库方式： OAI收割
来源：金属研究所
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