Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature
文献类型：期刊论文
| 作者 | Liu, JP; Kong, MY; Huang, DD; Li, JP; Sun, DZ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1998-12-01 |
| 卷号 | 194期号:3-4页码:426-429 |
| 关键词 | X-ray diffraction SiGe/Si disilane cracking dynamic simulation |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, JP() |
| 英文摘要 | Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750 degrees C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation (C) 1998 Elsevier Science B.V. All rights reserved. PACS: 61.10.Eq; 68.65.+g; 71.55.+g; 81.15.Hi. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000077280400019 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/108623]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JP,Kong, MY,Huang, DD,et al. Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature[J]. JOURNAL OF CRYSTAL GROWTH,1998,194(3-4):426-429. |
| APA | Liu, JP,Kong, MY,Huang, DD,Li, JP,&Sun, DZ.(1998).Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature.JOURNAL OF CRYSTAL GROWTH,194(3-4),426-429. |
| MLA | Liu, JP,et al."Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature".JOURNAL OF CRYSTAL GROWTH 194.3-4(1998):426-429. |
入库方式： OAI收割
来源：金属研究所
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