In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique
文献类型：期刊论文
| 作者 | Zhu, J; Xiao, D; Zhu, J; Zen, J |
| 刊名 | CRYSTAL RESEARCH AND TECHNOLOGY
 |
| 出版日期 | 1999 |
| 卷号 | 34期号:8页码:989-993 |
| 关键词 | ferroelectric thin film sputtering (Pb,La)TiO3 |
| ISSN号 | 0232-1300 |
| 通讯作者 | Zhu, J(nic0400@scuu.edu.cn) ; Zhu, J() |
| 英文摘要 | Highly c-axis oriented La-modified PbTiO3 (PLT) thin films were in situ grown on Pt(100)/MgO(100) and MgO(100) substrates by multi-ion-beam reactive co-sputtering (MIBRECS) technique at the substrate temperature range of 450 degrees C-540 degrees C. The orientation degree alpha of the films is more than 90%. The chemical composition is in good agreement with the designed one and is almost uniform across the surface of the substrates. The remanent polarization (P-r) and coercive field (E-c) were found to be 5.3 mu C/cm(2) and 78 kV/cm, respectively. |
| WOS研究方向 | Crystallography |
| 语种 | 英语 |
| WOS记录号 | WOS:000083136900007 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 源URL | [http://ir.imr.ac.cn/handle/321006/108910]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhu, J; Zhu, J |
| 作者单位 | 1.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 2.Acad Sinica, Int Ctr Mat Phys, Shengyang, Peoples R China 3.Sichuan Univ, Ctr Anal & Test, Chengdu 610064, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, J,Xiao, D,Zhu, J,et al. In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique[J]. CRYSTAL RESEARCH AND TECHNOLOGY,1999,34(8):989-993. |
| APA | Zhu, J,Xiao, D,Zhu, J,&Zen, J.(1999).In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique.CRYSTAL RESEARCH AND TECHNOLOGY,34(8),989-993. |
| MLA | Zhu, J,et al."In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique".CRYSTAL RESEARCH AND TECHNOLOGY 34.8(1999):989-993. |
入库方式： OAI收割
来源：金属研究所
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