Evolution of height distribution of Ge islands on Si(1 0 0)
文献类型：期刊论文
| 作者 | Liu, JP; Gong, Q; Huang, DD; Li, JP; Sun, DZ; Kong, MY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1999-04-01 |
| 卷号 | 200期号:3-4页码:617-620 |
| 关键词 | Ge islands Ge films bimodal distribution Ehrlich-Schwoebel barriers |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, JP() |
| 英文摘要 | Evolution of the height distribution of Ge islands during in situ annealing of Ge films on Si(1 0 0) has been studied. Island height is found to have a bimodal distribution. The standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. We suggest that the presence of Ehrlich-Schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for Ge islands on Si(1 0 0). The bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (C) 1999 Elsevier Science B.V. All rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000079859800040 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/108957]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JP,Gong, Q,Huang, DD,et al. Evolution of height distribution of Ge islands on Si(1 0 0)[J]. JOURNAL OF CRYSTAL GROWTH,1999,200(3-4):617-620. |
| APA | Liu, JP,Gong, Q,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).Evolution of height distribution of Ge islands on Si(1 0 0).JOURNAL OF CRYSTAL GROWTH,200(3-4),617-620. |
| MLA | Liu, JP,et al."Evolution of height distribution of Ge islands on Si(1 0 0)".JOURNAL OF CRYSTAL GROWTH 200.3-4(1999):617-620. |
入库方式： OAI收割
来源：金属研究所
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