High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)
文献类型：期刊论文
| 作者 | Liu, JP; Huang, DD; Li, JP; Sun, DZ; Kong, MY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1999-04-01 |
| 卷号 | 200期号:3-4页码:613-616 |
| 关键词 | Si low-temperature epitaxy P doping surface morphology morphological evolution |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, JP() |
| 英文摘要 | Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000079859800039 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/110003]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JP,Huang, DD,Li, JP,et al. High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)[J]. JOURNAL OF CRYSTAL GROWTH,1999,200(3-4):613-616. |
| APA | Liu, JP,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE).JOURNAL OF CRYSTAL GROWTH,200(3-4),613-616. |
| MLA | Liu, JP,et al."High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)".JOURNAL OF CRYSTAL GROWTH 200.3-4(1999):613-616. |
入库方式： OAI收割
来源：金属研究所
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