中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structure of Sigma 5[100] grain boundary and doping effect in iron

文献类型:期刊论文

作者Song, Q; Wang, C
刊名INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98
出版日期1999
卷号294-2页码:719-722
关键词electronic structure grain boundary doping effect
ISSN号0255-5476
通讯作者Song, Q()
英文摘要Based on CSL model and MD relaxation, the atomic structure of Sigma 5 [100] grain boundary in alpha-Fe are obtained. By using the tight-binding recursion method, the electronic structure and boron doping effect on Sigma 5 [100] grain boundary in alpha-Fe are investigated. The calculated results indicate that the boron enhances the atomic interaction between the host atoms on grain boundary, as well as between the boron and host atoms. The calculation of the energy of impurity segregation to grain boundary shows that the boron has the tendency to segregate onto the grain boundary, and can improve the cohesion of grain boundary.
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000080081000166
出版者TRANSTEC PUBLICATIONS LTD
源URL[http://ir.imr.ac.cn/handle/321006/110124]  
专题金属研究所_中国科学院金属研究所
通讯作者Song, Q
作者单位1.Cent Iron & Steel Res Inst, CN-100081 Beijing, Peoples R China
2.Acad Sinica, Int Ctr Mat Phys, CN-110015 Shenyang, Peoples R China
推荐引用方式
GB/T 7714
Song, Q,Wang, C. Electronic structure of Sigma 5[100] grain boundary and doping effect in iron[J]. INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98,1999,294-2:719-722.
APA Song, Q,&Wang, C.(1999).Electronic structure of Sigma 5[100] grain boundary and doping effect in iron.INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98,294-2,719-722.
MLA Song, Q,et al."Electronic structure of Sigma 5[100] grain boundary and doping effect in iron".INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98 294-2(1999):719-722.

入库方式: OAI收割

来源:金属研究所

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