The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Li, JM; Zeng, YP; Lin, LY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2000-12-01 |
| 卷号 | 220期号:4页码:457-460 |
| 关键词 | GSMBE SiGe alloy doping SIMS HBT current gain |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gao, F() |
| 英文摘要 | Three n-p-n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH3) and diborane (B2H6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300 K and 62 at 77 K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed. (C) 2000 Elsevier Science B.V. All rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000165957500017 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/110615]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Huang, DD,Li, JP,et al. The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):457-460. |
| APA | Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,220(4),457-460. |
| MLA | Gao, F,et al."The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):457-460. |
入库方式： OAI收割
来源：金属研究所
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