Increasing the photoluminescence intensity of Ge islands by chemical etching
文献类型：期刊论文
| 作者 | Gao, F; Huang, CJ; Huang, DD; Li, JP; Kong, MY; Zeng, YP; Li, JM; Lin, LY |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2001-10-01 |
| 卷号 | 10期号:10页码:966-969 |
| 关键词 | Ge islands chemical etching photoluminescence Si2H6-Ge molecular beam epitaxy |
| ISSN号 | 1009-1963 |
| 通讯作者 | Gao, F() |
| 英文摘要 | Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000171600300016 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://ir.imr.ac.cn/handle/321006/111663]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | 1.Acad Sinica, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Acad Sinica, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Shaanxi Normal Univ, Dept Phys, Xian 710062, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Huang, CJ,Huang, DD,et al. Increasing the photoluminescence intensity of Ge islands by chemical etching[J]. CHINESE PHYSICS,2001,10(10):966-969. |
| APA | Gao, F.,Huang, CJ.,Huang, DD.,Li, JP.,Kong, MY.,...&Lin, LY.(2001).Increasing the photoluminescence intensity of Ge islands by chemical etching.CHINESE PHYSICS,10(10),966-969. |
| MLA | Gao, F,et al."Increasing the photoluminescence intensity of Ge islands by chemical etching".CHINESE PHYSICS 10.10(2001):966-969. |
入库方式： OAI收割
来源：金属研究所
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