Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao, F; Huang, DD; Li, JP; Kong, MY; Sun, DZ; Li, JM; Zeng, YP; Lin, LY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2001-03-01 |
| 卷号 | 223期号:4页码:489-493 |
| 关键词 | molecular beam epitaxy semiconducting gegermanium semiconducting silicon bipolar transistors heterojunction semiconductor devices |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gao, F() |
| 英文摘要 | N-p-n Si/SiGe/Si heterostructure has been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the SiGe base layer, and the Ge has a trapezoidal profile. Postgrowth P implantation was performed to prepare a good ohmic contact to the emitter. Heterojunction bipolar transistor (HBT) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 GHz at 300 K have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000167740900007 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/112462]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Gao, F |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, F,Huang, DD,Li, JP,et al. Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2001,223(4):489-493. |
| APA | Gao, F.,Huang, DD.,Li, JP.,Kong, MY.,Sun, DZ.,...&Lin, LY.(2001).Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,223(4),489-493. |
| MLA | Gao, F,et al."Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 223.4(2001):489-493. |
入库方式： OAI收割
来源：金属研究所
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