Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
文献类型：期刊论文
| 作者 | Zhao, YW; Dong, HW; Jiao, JH; Zhao, JQ; Lin, LY |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
 |
| 出版日期 | 2002-04-01 |
| 卷号 | 41期号:4A页码:1929-1931 |
| 关键词 | indium phosphide annealing semi-insulating defect diffusion |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/JJAP.41.1929 |
| 通讯作者 | Zhao, YW() |
| 英文摘要 | Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000175703100005 |
| 出版者 | INST PURE APPLIED PHYSICS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/113768]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhao, YW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, YW,Dong, HW,Jiao, JH,et al. Fe-diffusion-induced defects in InP annealed in iron phosphide ambient[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2002,41(4A):1929-1931. |
| APA | Zhao, YW,Dong, HW,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Fe-diffusion-induced defects in InP annealed in iron phosphide ambient.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,41(4A),1929-1931. |
| MLA | Zhao, YW,et al."Fe-diffusion-induced defects in InP annealed in iron phosphide ambient".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41.4A(2002):1929-1931. |
入库方式： OAI收割
来源：金属研究所
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