Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
文献类型：期刊论文
| 作者 | Ling, CC; Mui, WK; Lam, CH; Beling, CD; Fung, S; Lui, MK; Cheah, KW; Li, KF; Zhao, YW; Gong, M |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2002-05-27 |
| 卷号 | 80期号:21页码:3934-3936 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1482419 |
| 通讯作者 | Ling, CC(ccling@hku.hk) |
| 英文摘要 | Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V(Ga)) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V(Ga) defect, at least for cases with annealing temperatures above 300 degreesC, V(Ga) is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000175709000018 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/114596]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ling, CC |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 4.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ling, CC,Mui, WK,Lam, CH,et al. Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. APPLIED PHYSICS LETTERS,2002,80(21):3934-3936. |
| APA | Ling, CC.,Mui, WK.,Lam, CH.,Beling, CD.,Fung, S.,...&Gong, M.(2002).Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.APPLIED PHYSICS LETTERS,80(21),3934-3936. |
| MLA | Ling, CC,et al."Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".APPLIED PHYSICS LETTERS 80.21(2002):3934-3936. |
入库方式： OAI收割
来源：金属研究所
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