Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Dong, HW; Zhao, YW; Zeng, YP; Jiao, JH; Li, JM; Lin, LY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003-04-01 |
| 卷号 | 250期号:3-4页码:364-369 |
| 关键词 | diffusion interfaces substrates molecular beam epitaxy phosphides semiconducting indium phosphide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/S0022-0248(02)02488-0 |
| 通讯作者 | Dong, HW() |
| 英文摘要 | Tensile-strained InAlAs layers have been grown by solid-source molecular beam epitaxy on as-grown Fe-doped semi-insulating (SI) InP substrates and undoped SI InP substrates obtained by annealing undoped conductive InP wafers (wafer-annealed InP). The effect of the two substrates on InAlAs epilayers and InAlAs/InP type II heterostructures has been studied by using a variety of characterization techniques. Our calculation data proved that the out-diffusion of Fe atoms in InP substrate may not take place due to their low diffusion, coefficient. Double-crystal X-ray diffraction measurements show that the lattice mismatch between the InAlAs layers and the two substrates is different, which is originated from their different Fe concentrations. Furthermore, photoluminescence results indicate that the type II heterostructure grown on the wafer-annealed InP substrate exhibits better optical and interface properties than that grown on the as-grown Fe-doped substrate. We have also given a physically coherent explanation on the basis of these investigations. (C) 2003 Elsevier Science B.V. All rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000181517900015 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/116030]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Dong, HW |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dong, HW,Zhao, YW,Zeng, YP,et al. Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2003,250(3-4):364-369. |
| APA | Dong, HW,Zhao, YW,Zeng, YP,Jiao, JH,Li, JM,&Lin, LY.(2003).Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,250(3-4),364-369. |
| MLA | Dong, HW,et al."Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 250.3-4(2003):364-369. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。