Annealing and activation of silicon implanted in semi-insulating InP substrates
文献类型：期刊论文
| 作者 | Dong, HW; Zhao, YW; Li, JM |
| 刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| 出版日期 | 2003-08-01 |
| 卷号 | 6期号:4页码:215-218 |
| 关键词 | semi-insulating InP ion implantation silicon annealing activation |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2003.08.002 |
| 通讯作者 | Dong, HW() |
| 英文摘要 | We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate. These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved. |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000187037700009 |
| 出版者 | ELSEVIER SCI LTD |
| 源URL | [http://ir.imr.ac.cn/handle/321006/116473]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Dong, HW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dong, HW,Zhao, YW,Li, JM. Annealing and activation of silicon implanted in semi-insulating InP substrates[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2003,6(4):215-218. |
| APA | Dong, HW,Zhao, YW,&Li, JM.(2003).Annealing and activation of silicon implanted in semi-insulating InP substrates.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,6(4),215-218. |
| MLA | Dong, HW,et al."Annealing and activation of silicon implanted in semi-insulating InP substrates".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6.4(2003):215-218. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。