Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
文献类型：期刊论文
| 作者 | Dong, ZY; Zhao, YW; Zeng, YP; Duan, ML; Sun, WR; Jiao, JH; Lin, LY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003-11-01 |
| 卷号 | 259期号:1-2页码:1-7 |
| 关键词 | annealing defects etching semiconducting indium phosphide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.07.009 |
| 通讯作者 | Dong, ZY() |
| 英文摘要 | Microdefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000186123700001 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/116899]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Dong, ZY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dong, ZY,Zhao, YW,Zeng, YP,et al. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances[J]. JOURNAL OF CRYSTAL GROWTH,2003,259(1-2):1-7. |
| APA | Dong, ZY.,Zhao, YW.,Zeng, YP.,Duan, ML.,Sun, WR.,...&Lin, LY.(2003).Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances.JOURNAL OF CRYSTAL GROWTH,259(1-2),1-7. |
| MLA | Dong, ZY,et al."Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances".JOURNAL OF CRYSTAL GROWTH 259.1-2(2003):1-7. |
入库方式： OAI收割
来源：金属研究所
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