Cr-O-N films deposited by arc ion plating as active diffusion barriers
文献类型：期刊论文
| 作者 | Wang, QM; Guo, MH; Ke, PL; Sun, C; Huang, RF; Wen, LS |
| 刊名 | ACTA METALLURGICA SINICA
 |
| 出版日期 | 2004-12-01 |
| 卷号 | 40期号:12页码:1264-1268 |
| 关键词 | Cr-O-N reactive diffusion barrier arc ion plating (AIP) |
| ISSN号 | 0412-1961 |
| 通讯作者 | Wang, QM(qmwang@imr.ac.cn) |
| 英文摘要 | Cr-O-N films with different chemical composition were deposited using arc ion plating (AIP) between NiCoCrAlY coatings and the DSM11 substrate as diffusion barriers. The inhibition effects of the diffusion barriers on the interdiffusion of the alloy elements in the DSM11/CrO-N/NiCoCrAlY system were studied after exposured at 900 degreesC for 1400 h. The influences of the barriers on the oxidation kinetics were also investigated. The results indicate that the Cr-O-N layers can change into Al-rich oxide layers with active bonding with the coatings and the substrates during the high temperature exposure. The Al-rich oxide layers hindered the interdiffusion of the alloying elements between DSM11 substrate and NiCoCrAlY coating. Thus the Cr-O-N layers can act as active diffusion barrier. The O and N compositions in the Cr-O-N layer affect the continuity and density of the Al-rich oxide layers, and influence the inhibition effect of the diffusion barriers accordingly. All the Cr-O-N barriers decreased the weight gain of the NiCoCrAlY coatings at 900 degreesC. The improvement extent of the Cr-O-N barriers on the oxidation behavior of the NiCoCrAlY coatings is corresponding with the inhibition capacity of the barriers. |
| WOS研究方向 | Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000226107700007 |
| 出版者 | SCIENCE CHINA PRESS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/118531]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, QM |
| 作者单位 | Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, QM,Guo, MH,Ke, PL,et al. Cr-O-N films deposited by arc ion plating as active diffusion barriers[J]. ACTA METALLURGICA SINICA,2004,40(12):1264-1268. |
| APA | Wang, QM,Guo, MH,Ke, PL,Sun, C,Huang, RF,&Wen, LS.(2004).Cr-O-N films deposited by arc ion plating as active diffusion barriers.ACTA METALLURGICA SINICA,40(12),1264-1268. |
| MLA | Wang, QM,et al."Cr-O-N films deposited by arc ion plating as active diffusion barriers".ACTA METALLURGICA SINICA 40.12(2004):1264-1268. |
入库方式： OAI收割
来源：金属研究所
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