中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers

文献类型:期刊论文

作者Wang, QM; Wu, YN; Ji, AL; Ke, PL; Sun, C; Huang, RF; Wen, LS
刊名ACTA METALLURGICA SINICA
出版日期2004
卷号40期号:1页码:83-87
关键词Al-O-N Cr-O-N diffusion barrier layer arc ion plating (AIP)
ISSN号0412-1961
通讯作者Wang, QM(qmwang@imr.ac.cn)
英文摘要Al-O-N and Cr-O-N thin films were deposited on superalloy DSM11 by arc ion plating (AIP). The effects of flow rates of oxygen and nitrogen on phase composition and the interdiffusion of various elements at high temperature between DSM11 substrate and NiCoCrAlY coating were studied in the systems of DSM11/NiCoCrAlY, DSM11/Al-O-N/NiCoCrAlY and DSM11/Cr-O-N/NiCoCrAlY. The results indicate that the Al(Cr)-O-N films are polycrystalline with phase constitution of alpha-Al2O3 + hexagonal AIN or Cr2O3+CrN, respectively. The relative intensity of AIN to Al2O3 or CrN to Cr2O3 is changed with the change of flow rates of oxygen and nitrogen. After oxidation at 1050 degreesC for 100 h, Al-O-N hindered the interdiffusion of elements between DSM11 and NiCoCrAlY more effectively than Cr-O-N film. The diffusion barrier layers hardly influenced the oxidation kinetics of the NiCoCrAlY coating.
WOS研究方向Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000189379800016
出版者SCIENCE CHINA PRESS
源URL[http://ir.imr.ac.cn/handle/321006/118540]  
专题金属研究所_中国科学院金属研究所
通讯作者Wang, QM
作者单位Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Wang, QM,Wu, YN,Ji, AL,et al. Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers[J]. ACTA METALLURGICA SINICA,2004,40(1):83-87.
APA Wang, QM.,Wu, YN.,Ji, AL.,Ke, PL.,Sun, C.,...&Wen, LS.(2004).Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers.ACTA METALLURGICA SINICA,40(1),83-87.
MLA Wang, QM,et al."Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers".ACTA METALLURGICA SINICA 40.1(2004):83-87.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。