Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step
文献类型：期刊论文
| 作者 | Yang, Bing2; Zhuang, Hao1; Li, Junhao2; Huang, Nan2; Liu, Lusheng2; Tai, Kaiping2; Jiang, Xin1,2 |
| 刊名 | CRYSTENGCOMM
 |
| 出版日期 | 2016 |
| 卷号 | 18期号:36页码:6817-6823 |
| ISSN号 | 1466-8033 |
| DOI | 10.1039/c6ce01409g |
| 通讯作者 | Jiang, Xin(xjiang@imr.ac.cn) |
| 英文摘要 | The epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low temperature in one step using the microwave plasma CVD technique. A high density of defects such as misfit dislocations, stacking faults (SF) and twin boundaries (TB) is generated in the film. Defect-induced strain distribution in the 3C-SiC film is analyzed by the geometric phase analysis (GPA) method combined with X-ray diffraction (XRD) and Raman spectroscopy. The strain analysis at an atomic level reveals that periodical misfit dislocations at the interface generate high local compressive strain (>20%) around the core of the dislocations in the SiC film, relaxing the major part of the intrinsic strain. A highly compressive interfacial layer is found to form between the SiC film and Si substrate regardless of the carbonization temperature. This interfacial layer is linked with the carbonization step of the film growth process. In addition, twins and stacking faults provide a complementary route for strain relaxation during the film growth process. It is found that more strain is accommodated at the matrix/twin interface during twin nucleation rather than that at the growth stage. The atomic understanding of the effects of crystalline defects on strain relaxation will provide important implications for the control of defects in SiC films and design of high-performance SiC devices. |
| 资助项目 | National Natural Science Foundation of China[51402309] ; Youth Innovation Program of the Institute of Metal Research[Y5NCA111A1] ; Youth Innovation Program of the Institute of Metal Research[Y6NC6F1161] |
| WOS研究方向 | Chemistry ; Crystallography |
| 语种 | 英语 |
| WOS记录号 | WOS:000384235800007 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 资助机构 | National Natural Science Foundation of China ; Youth Innovation Program of the Institute of Metal Research |
| 源URL | [http://ir.imr.ac.cn/handle/321006/122854]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Jiang, Xin |
| 作者单位 | 1.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Bing,Zhuang, Hao,Li, Junhao,et al. Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step[J]. CRYSTENGCOMM,2016,18(36):6817-6823. |
| APA | Yang, Bing.,Zhuang, Hao.,Li, Junhao.,Huang, Nan.,Liu, Lusheng.,...&Jiang, Xin.(2016).Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step.CRYSTENGCOMM,18(36),6817-6823. |
| MLA | Yang, Bing,et al."Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step".CRYSTENGCOMM 18.36(2016):6817-6823. |
入库方式： OAI收割
来源：金属研究所
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