Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions
文献类型：期刊论文
| 作者 | He, Shumin2,6; Liu, Guolei2; Zhu, Yinlian1; Ma, Xiuliang1; Sun, Jirong3,4; Kang, Shishou2; Yan, Shishen2; Chen, Yanxue2; Mei, Liangmo2; Jiao, Jun5 |
| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2017 |
| 卷号 | 7期号:37页码:22715-22721 |
| ISSN号 | 2046-2069 |
| DOI | 10.1039/c7ra02339a |
| 通讯作者 | Liu, Guolei(liu-guolei@sdu.edu.cn) |
| 英文摘要 | Direct evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO3/Nd:SrTiO3(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO. The Au/BFO/NSTO junction shows large current rectification and hysteretic resistive switching behavior without any electroforming process. The conduction mechanism is dominated by interface-limited Fowler-Nordheim (FN) tunneling through a potential barrier formed at the BFO/NSTO interface. Measurements of polarization switching dynamics and capacitance-voltage characteristics provide direct evidence that the resistance switching in the Au/BFO/NSTO junction is ferroelectric and interfacially limited. The observed resistance switching behavior can be attributed to the ferroelectric polarization modulation of the barrier and depletion width of the p-n junction formed at the BFO/NSTO interface. |
| 资助项目 | State Key Project of Fundamental research of China[2015CB921402] ; National Natural Science Foundation of China[11374189] ; National Natural Science Foundation of China[51231007] ; National Natural Science Foundation of China[11627805] ; 111 Project[B13029] ; China electronics technology group corporation[46] ; China electronics technology group corporation[CJ20130304] |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| WOS记录号 | WOS:000400338000012 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 资助机构 | State Key Project of Fundamental research of China ; National Natural Science Foundation of China ; 111 Project ; China electronics technology group corporation |
| 源URL | [http://ir.imr.ac.cn/handle/321006/124567]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Guolei |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shengyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Portland State Univ, Dept Mech & Mat Engn, POB 751, Portland, OR 97207 USA 6.Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, Shumin,Liu, Guolei,Zhu, Yinlian,et al. Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions[J]. RSC ADVANCES,2017,7(37):22715-22721. |
| APA | He, Shumin.,Liu, Guolei.,Zhu, Yinlian.,Ma, Xiuliang.,Sun, Jirong.,...&Jiao, Jun.(2017).Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions.RSC ADVANCES,7(37),22715-22721. |
| MLA | He, Shumin,et al."Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions".RSC ADVANCES 7.37(2017):22715-22721. |
入库方式： OAI收割
来源：金属研究所
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