Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects
文献类型：期刊论文
| 作者 | Zheng, Lili1,3; Hua, Qingsong1; Li, Xichao2,3; Li, Meishuan3; Qian, Yuhai3; Xu, Jingjun3; Dai, Zuoqiang1; Chen, Tao1; Zhang, Jianmin1; Zhang, Hongxin1 |
| 刊名 | RSC ADVANCES
 |
| 出版日期 | 2017 |
| 卷号 | 7期号:67页码:42350-42356 |
| ISSN号 | 2046-2069 |
| DOI | 10.1039/c7ra07215e |
| 通讯作者 | Zheng, Lili() ; Li, Xichao(lixc@qibebt.ac.cn) |
| 英文摘要 | The oxidation behaviours and electrical properties of 5 at% Ta doped Ti3SiC2 solid solution have been investigated at 800 degrees C in air for up to 500 h. The oxidation kinetics of (Ti0.95Ta0.05)(3)SiC2 follows a parabolic law. The oxidation rate constant is 7.33 x 10(-14) g(2) cm(-4) s(-1), which is lower than those of Ti3SiC2, (Ti0.95Nb0.05)(3)SiC2 and Crofer 22 APU. Ta doped r-TiO2 formed (Ti0.95Ta0.05)(3)SiC2 during the oxidation process. Ta doping can limit the outward diffusion of Ti by decreasing the native Ti interstitials concentration and simultaneously restraining the inward diffusion of oxygen by decreasing the O vacancy concentration. As a result, the oxidation resistance is significantly improved and the oxide scale structure of Ti3SiC2 changes from a double-layer to a monolithic layer. The ASR of (Ti0.95Ta0.05)(3)SiC2 after oxidation at 800 degrees C in air for 500 h is 29.5 mU cm(2), which is much lower than that of Ti3SiC2. Ta doping can increase the electron concentration in r-TiO2 and thereby increase the electrical conductivity of r-TiO2. Therefore, the ASR of (Ti0.95Ta0.05)(3)SiC2 after oxidation is lower compared to that of Ti3SiC2. |
| 资助项目 | National Science Foundation of China[51271191] ; National Science Foundation of China[51571205] ; National Science Foundation of China[41406106] ; Scientific Research Start-up Fund of Qingdao University[41117010089] |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| WOS记录号 | WOS:000409147500044 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 资助机构 | National Science Foundation of China ; Scientific Research Start-up Fund of Qingdao University |
| 源URL | [http://ir.imr.ac.cn/handle/321006/125005]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zheng, Lili; Li, Xichao |
| 作者单位 | 1.Qingdao Univ, Coll Mech & Elect Engn, Power & Energy Storage Syst Res Ctr, Qingdao 266071, Peoples R China 2.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, Lili,Hua, Qingsong,Li, Xichao,et al. Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects[J]. RSC ADVANCES,2017,7(67):42350-42356. |
| APA | Zheng, Lili.,Hua, Qingsong.,Li, Xichao.,Li, Meishuan.,Qian, Yuhai.,...&Zhang, Hongxin.(2017).Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects.RSC ADVANCES,7(67),42350-42356. |
| MLA | Zheng, Lili,et al."Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects".RSC ADVANCES 7.67(2017):42350-42356. |
入库方式： OAI收割
来源：金属研究所
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