Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory
文献类型：期刊论文
| 作者 | Zhang, Ting; Song, Zhitang; Liu, Bo; Feng, Songlin; Chen, Bomy |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2007-06-01 |
| 卷号 | 51期号:6页码:950-954 |
| 关键词 | phase change chalcogenide random access memory Si2Sb2Te5 |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2007.03.016 |
| 通讯作者 | Zhang, Ting(tzhang@mail.sim.ac.cn) |
| 英文摘要 | A wide band-gap phase change material Si2Sb2Te5 for chalcogenide random access memory application was investigated. The material possesses a low threshold current from amorphous to polycrystalline state in voltage-current measurement, and shows a good data retention. Band-gap width of the amorphous and polycrystalline Si2Sb2Te5 are determined to be 0.89 and 0.62 eV by means of Fourier Transform Infrared Spectroscopy. Chalcogenide random access memory device with bottom electrode contact of 260 nm in diameter was fabricated and characterized. With a 50 ns width voltage pulse, RESET and SET voltage values of 3.2 and 1.4 V were achieved. (c) 2007 Elsevier Ltd. All rights reserved. |
| WOS研究方向 | Engineering ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000248173700021 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 源URL | [http://ir.imr.ac.cn/handle/321006/126202]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Ting |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China 2.Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA 3.Grad Sch Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Ting,Song, Zhitang,Liu, Bo,et al. Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory[J]. SOLID-STATE ELECTRONICS,2007,51(6):950-954. |
| APA | Zhang, Ting,Song, Zhitang,Liu, Bo,Feng, Songlin,&Chen, Bomy.(2007).Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory.SOLID-STATE ELECTRONICS,51(6),950-954. |
| MLA | Zhang, Ting,et al."Investigation of phase change Si(2)Sb(2)Te(5)material and its application in chalcogenide random access memory".SOLID-STATE ELECTRONICS 51.6(2007):950-954. |
入库方式： OAI收割
来源：金属研究所
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