Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy
文献类型：期刊论文
| 作者 | Liu, JP; Liu, XF; Li, JP; Sun, DZ; Kong, MY |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1997-11-01 |
| 卷号 | 181期号:4页码:441-445 |
| 关键词 | Si1-xGex alloys low-temperature epitaxy composition dependence growth kinetics |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, JP() |
| 英文摘要 | Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:A1997YH19200017 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.imr.ac.cn/handle/321006/126884]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, JP |
| 作者单位 | CHINESE ACAD SCI,INST SEMICOND,CTR MAT SCI,POB 912,BEIJING 100083,PEOPLES R CHINA |
| 推荐引用方式 GB/T 7714 | Liu, JP,Liu, XF,Li, JP,et al. Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1997,181(4):441-445. |
| APA | Liu, JP,Liu, XF,Li, JP,Sun, DZ,&Kong, MY.(1997).Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,181(4),441-445. |
| MLA | Liu, JP,et al."Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 181.4(1997):441-445. |
入库方式： OAI收割
来源：金属研究所
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