中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A simple and efficient criterion for ready screening of potential topological insulators

文献类型:期刊论文

作者Cao, Guohua4,5; Liu, Huijun4,5; Chen, Xing-Qiu2; Sun, Yan2; Liang, Jinghua4,5; Yu, Rui4,5; Zhang, Zhenyu1,3
刊名SCIENCE BULLETIN
出版日期2017-12-30
卷号62期号:24页码:1649-1653
ISSN号2095-9273
关键词Topological insulators Band inversion Spin-orbit coupling Predictive design
DOI10.1016/j.scib.2017.11.016
通讯作者Liu, Huijun(phlhj@whu.edu.cn) ; Chen, Xing-Qiu(xingqiu.chen@imr.ac.cn) ; Zhang, Zhenyu(zhangzy@ustc.edu.cn)
英文摘要Topological materials are a new and rapidly expanding class of quantum matter. To date, identification of the topological nature of a given compound material demands specific determination of the appropriate topological invariant through detailed electronic structure calculations. Here we present an efficient criterion that allows ready screening of potential topological materials, using topological insulators as prototypical examples. The criterion is inherently tied to the band inversion induced by spin-orbit coupling, and is uniquely defined by a minimal number of two elemental physical properties of the constituent elements: the atomic number and Pauling electronegativity. The validity and predictive power of the criterion is demonstrated by rationalizing many known topological insulators and potential candidates in the tetradymite and half-Heusler families, and the underlying design principle is naturally also extendable to predictive discoveries of other classes of topological materials. (C) 2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
资助项目National Natural Science Foundation of China[11574236] ; National Natural Science Foundation of China[51671193] ; National Natural Science Foundation of China[61434002] ; National Science Fund for Distinguished Young Scholars[51725103]
WOS研究方向Science & Technology - Other Topics
语种英语
出版者SCIENCE PRESS
WOS记录号WOS:000418893800010
资助机构National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars
源URL[http://ir.imr.ac.cn/handle/321006/127131]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Huijun; Chen, Xing-Qiu; Zhang, Zhenyu
作者单位1.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
3.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Int Ctr Quantum Design Funct Mat ICQD, Hefei 230026, Anhui, Peoples R China
4.Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Hubei, Peoples R China
5.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
推荐引用方式
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Cao, Guohua,Liu, Huijun,Chen, Xing-Qiu,et al. A simple and efficient criterion for ready screening of potential topological insulators[J]. SCIENCE BULLETIN,2017,62(24):1649-1653.
APA Cao, Guohua.,Liu, Huijun.,Chen, Xing-Qiu.,Sun, Yan.,Liang, Jinghua.,...&Zhang, Zhenyu.(2017).A simple and efficient criterion for ready screening of potential topological insulators.SCIENCE BULLETIN,62(24),1649-1653.
MLA Cao, Guohua,et al."A simple and efficient criterion for ready screening of potential topological insulators".SCIENCE BULLETIN 62.24(2017):1649-1653.

入库方式: OAI收割

来源:金属研究所

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