Enhanced doping effect on tuning structural phases of monolayer antimony
文献类型：期刊论文
| 作者 | Wang, Jizhang1,2,3,4; Yang, Teng3; Zhang, Zhidong3; Yang, Li1,2 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2018-05-21 |
| 卷号 | 112期号:21页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5028265 |
| 通讯作者 | Yang, Teng(yangteng@imr.ac.cn) ; Yang, Li(lyang@physics.wustl.edu) |
| 英文摘要 | Doping is capable to control the atomistic structure, electronic structure, and even to dynamically realize a semiconductor-metal transition in two-dimensional (2D) transition metal dichalcogenides (TMDs). However, the high critical doping density (similar to 10(14) electron/cm(2)), compound nature, and relatively low carrier mobility of TMDs limits broader applications. Using first-principles calculations, we predict that, via a small transition potential, a substantially lower hole doping density (similar to 6 x 10(12) hole/cm(2)) can switch the ground-state structure of monolayer antimony from the hexagonal beta-phase, a 2D semiconductor with excellent transport performance and air stability but an indirect bandgap, to the orthorhombic alpha phase with a direct bandgap and potentially better carrier mobility. We further show that this structural engineering can be achieved by the established electrostatic doping, surface functional adsorption, or directly using graphene substrate. This gives hope to dynamically tuning and large-scale production of 2D single-element semiconductors that simultaneously exhibit remarkable transport and optical performance. Published by AIP Publishing. |
| 资助项目 | National Science Foundation (NSF) CAREER Grant[DMR-1455346] ; NSF[EFRI-2DARE-1542815] ; National Key R&D Program of China[2017YFA0206301] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China[U1537204] ; outstanding students international exchange program of University of Science and Technology of China (USTC) ; China Scholarship Council |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000433140900028 |
| 出版者 | AMER INST PHYSICS |
| 资助机构 | National Science Foundation (NSF) CAREER Grant ; NSF ; National Key R&D Program of China ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China ; outstanding students international exchange program of University of Science and Technology of China (USTC) ; China Scholarship Council |
| 源URL | [http://ir.imr.ac.cn/handle/321006/128282]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Teng; Yang, Li |
| 作者单位 | 1.Washington Univ, Inst Mat Sci & Engn, St Louis, MO 63136 USA 2.Washington Univ, Dept Phys, St Louis, MO 63136 USA 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Jizhang,Yang, Teng,Zhang, Zhidong,et al. Enhanced doping effect on tuning structural phases of monolayer antimony[J]. APPLIED PHYSICS LETTERS,2018,112(21):5. |
| APA | Wang, Jizhang,Yang, Teng,Zhang, Zhidong,&Yang, Li.(2018).Enhanced doping effect on tuning structural phases of monolayer antimony.APPLIED PHYSICS LETTERS,112(21),5. |
| MLA | Wang, Jizhang,et al."Enhanced doping effect on tuning structural phases of monolayer antimony".APPLIED PHYSICS LETTERS 112.21(2018):5. |
入库方式： OAI收割
来源：金属研究所
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