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Inversion domain boundaries in MoSe2 layers

文献类型：期刊论文

作者Quang Duc Truong2; Nguyen Tuan Hung3; Nakayasu, Yuta2; Nayuki, Keiichiro1; Sasaki, Yoshikazu1; Kempaiah, Devaraju Murukanahally2; Yin, Li-Chang4; Tomai, Takaaki2; Saito, Riichiro3; Honma, Itaru2
刊名RSC ADVANCES
出版日期2018
卷号8期号:58页码:33391-33397
ISSN号2046-2069
DOI10.1039/c8ra07205a
通讯作者Quang Duc Truong(truong@tohoku.ac.jp) ; Honma, Itaru(itaru.honma.e8@tohoku.ac.jp)
英文摘要Structural defects, including point defects, dislocation and planar defects, significantly affect the physical and chemical properties of low-dimensional materials, such as layered compounds. In particular, inversion domain boundary is an intrinsic defect surrounded by a 60 degrees grain boundary, which significantly influences electronic transport properties. We study atomic structures of the inversion domain grain boundaries (IDBs) in layered transition metal dichalcogenides (MoSe2 and MoS2) obtained by an exfoliation method, based on the aberration-corrected scanning transmission electron microscopy observation and density functional theory (DFT) calculation. The atomic-scale observation shows that the grain boundaries consist of two different types of 4-fold ring point shared and 8-fold ring edge shared chains. The results of DFT calculations indicate that the inversion domain grain boundary behaves as a metallic one-dimensional chain embedded in the semiconducting MoSe2 matrix with the occurrence of a new state within the band gap.
资助项目Japan Society for Promotion of Science (JSPS)[PU15903] ; Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) ; Core Technology Consortium for Advanced Energy Devices, Tohoku University, Japan ; ALCA-SPRING (ALCA-Specially Promoted Research for Innovative Next Generation Batteries) from Japan Science and Technology Agency (JST) ; JSPS KAKENHI[JP18H01810] ; JSPS KAKENHI[JP18J10151]
WOS研究方向Chemistry
语种英语
WOS记录号WOS:000448422800046
出版者ROYAL SOC CHEMISTRY
资助机构Japan Society for Promotion of Science (JSPS) ; Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) ; Core Technology Consortium for Advanced Energy Devices, Tohoku University, Japan ; ALCA-SPRING (ALCA-Specially Promoted Research for Innovative Next Generation Batteries) from Japan Science and Technology Agency (JST) ; JSPS KAKENHI
源URL[http://ir.imr.ac.cn/handle/321006/130083]  
专题金属研究所_中国科学院金属研究所
通讯作者Quang Duc Truong; Honma, Itaru
作者单位1.JEOL Ltd, Field Solut Div, Tokyo 1960022, Japan
2.Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
3.Tohoku Univ, Dept Phys, Sendai, Miyagi 9808577, Japan
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式
GB/T 7714		 Quang Duc Truong,Nguyen Tuan Hung,Nakayasu, Yuta,et al. Inversion domain boundaries in MoSe2 layers[J]. RSC ADVANCES,2018,8(58):33391-33397.
APA Quang Duc Truong.,Nguyen Tuan Hung.,Nakayasu, Yuta.,Nayuki, Keiichiro.,Sasaki, Yoshikazu.,...&Honma, Itaru.(2018).Inversion domain boundaries in MoSe2 layers.RSC ADVANCES,8(58),33391-33397.
MLA Quang Duc Truong,et al."Inversion domain boundaries in MoSe2 layers".RSC ADVANCES 8.58(2018):33391-33397.

入库方式： OAI收割

来源：金属研究所

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