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Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit

文献类型：期刊论文

作者Xue, Fei1; Hu, Weijin2; Lee, Ko-Chun3; Lu, Li-Syuan4; Zhang, Junwei1; Tang, Hao-Ling1; Han, Ali1; Hsu, Wei-Ting4; Tu, Shaobo1; Chang, Wen-Hao4
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2018-12-12
卷号28期号:50页码:7
ISSN号1616-301X
关键词hexagonal alpha-In2Se3 layered 2D materials monolayer room-temperature ferroelectricity
DOI10.1002/adfm.201803738
通讯作者Xue, Fei(xuefei0828@gmail.com) ; Li, Lain-Jong(ljliv@tsmc.com) ; Zhang, Xixiang(xixiang.zhang@kaust.edu.sa)
英文摘要2D ferroelectric material has emerged as an attractive building block for high density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking alpha-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal alpha-In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (approximate to 1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H alpha-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.
资助项目King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2015-2634-CRG4] ; King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2016-2996-CRG5] ; Hundred Talents Program of the Chinese Academy of Sciences ; Ministry of Science and Technology (MOST) of Taiwan[105-2119-M-009-014-MY3] ; Ministry of Science and Technology (MOST) of Taiwan[107-2112-M-009-024-MY3] ; Center for Emergent Functional Matter Science (CEFMS) of NCTU
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000456421000002
资助机构King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) ; Hundred Talents Program of the Chinese Academy of Sciences ; Ministry of Science and Technology (MOST) of Taiwan ; Center for Emergent Functional Matter Science (CEFMS) of NCTU
源URL[http://ir.imr.ac.cn/handle/321006/131307]  
专题金属研究所_中国科学院金属研究所
通讯作者Xue, Fei; Li, Lain-Jong; Zhang, Xixiang
作者单位1.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
2.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
3.Natl TsingHua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
4.Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
5.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia
6.TSMC, Corp Res & Chief Technol Off, Hsinchu 30075, Taiwan
推荐引用方式
GB/T 7714		 Xue, Fei,Hu, Weijin,Lee, Ko-Chun,et al. Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(50):7.
APA Xue, Fei.,Hu, Weijin.,Lee, Ko-Chun.,Lu, Li-Syuan.,Zhang, Junwei.,...&Zhang, Xixiang.(2018).Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit.ADVANCED FUNCTIONAL MATERIALS,28(50),7.
MLA Xue, Fei,et al."Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit".ADVANCED FUNCTIONAL MATERIALS 28.50(2018):7.

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来源：金属研究所

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