Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films
文献类型：期刊论文
| 作者 | Zhang, Anqi1,3; Wei, Feng2,3; Yan, Chenhui2,3; Wang, Fei2,3; Ma, Song3; Zhang, Zhidong3 |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2019-07-05 |
| 卷号 | 30期号:27页码:6 |
| 关键词 | topological crystalline insulator Pb1-xSnxTe (111) topological phase transition weak antilocalization weak localization |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/1361-6528/ab13cf |
| 通讯作者 | Ma, Song(songma@imr.ac.cn) |
| 英文摘要 | We report the magneotransport studies on the topological crystalline insulator (TCI) Pb1-xSnxTe (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb1-xSnxTe (111) thin films A weak antilocalization likely related to the topological surface states is observed in transport of Pb1-xSnxTe (x > 0.4) thin films, whereas a weak localization is displayed in Pb1-xSnxTe (x < 0.4) thin films This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb1-xSnxTe. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb1-xSnxTe thin film. |
| 资助项目 | National Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51871219] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000465893800001 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China ; National Key R&D Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/133049]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ma, Song |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Anqi,Wei, Feng,Yan, Chenhui,et al. Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films[J]. NANOTECHNOLOGY,2019,30(27):6. |
| APA | Zhang, Anqi,Wei, Feng,Yan, Chenhui,Wang, Fei,Ma, Song,&Zhang, Zhidong.(2019).Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films.NANOTECHNOLOGY,30(27),6. |
| MLA | Zhang, Anqi,et al."Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films".NANOTECHNOLOGY 30.27(2019):6. |
入库方式： OAI收割
来源：金属研究所
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