Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors
文献类型：期刊论文
| 作者 | Khan, Usman2; Luo, Yuting2; Tang, Lei2; Teng, Changjiu2; Liu, Jiaman2; Liu, Bilu2; Cheng, Hui-Ming1,2 |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2019-04-04 |
| 卷号 | 29期号:14页码:9 |
| 关键词 | Bi2O2Se contact resistance detectivity millimeter-size single crystal phototransistor responsivity vapor-solid deposition |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.201807979 |
| 通讯作者 | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 英文摘要 | Atomically thin 2D materials have received intense interest both scientifically and technologically. Bismuth oxyselenide (Bi2O2Se ) is a semiconducting 2D material with high electron mobility and good stability, making it promising for high-performance electronics and optoelectronics. Here, an ambient-pressure vapor-solid (VS) deposition approach for the growth of millimeter-size 2D Bi2O2Se single crystal domains with thicknesses down to one monolayer is reported. The VS-grown 2D Bi2O2Se has good crystalline quality, chemical uniformity, and stoichiometry. Field-effect transistors (FETs) are fabricated using this material and they show a small contact resistivity of 55.2 Omega cm measured by a transfer line method. Upon light irradiation, a phototransistor based on the Bi2O2Se FETs exhibits a maximum responsivity of 22 100 AW(-1), which is a record among currently reported 2D semiconductors and approximately two orders of magnitude higher than monolayer MoS2. The Bi2O2Se phototransistor shows a gate tunable photodetectivity up to 3.4 x 10(15) Jones and an on/off ratio up to approximate to 10(9), both of which are much higher than phototransistors based on other 2D materials reported so far. The results of this study indicate a method to grow large 2D Bi2O2Se single crystals that have great potential for use in optoelectronic applications. |
| 资助项目 | National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51521091] ; Youth 1000-Talent Program of China ; Shenzhen Basic Research Project[JCYJ20170307140956657] ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Economic, Trade and Information Commission of Shenzhen Municipality[201901171523] ; Development & Reform Commission of Shenzhen Municipality |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000467109100013 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 资助机构 | National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; Shenzhen Basic Research Project ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Economic, Trade and Information Commission of Shenzhen Municipality ; Development & Reform Commission of Shenzhen Municipality |
| 源URL | [http://ir.imr.ac.cn/handle/321006/133080]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Bilu; Cheng, Hui-Ming |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Khan, Usman,Luo, Yuting,Tang, Lei,et al. Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(14):9. |
| APA | Khan, Usman.,Luo, Yuting.,Tang, Lei.,Teng, Changjiu.,Liu, Jiaman.,...&Cheng, Hui-Ming.(2019).Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors.ADVANCED FUNCTIONAL MATERIALS,29(14),9. |
| MLA | Khan, Usman,et al."Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors".ADVANCED FUNCTIONAL MATERIALS 29.14(2019):9. |
入库方式： OAI收割
来源：金属研究所
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