A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission
文献类型：期刊论文
| 作者 | Qi, Lin2; Chai, Zhaoyuan2; Yang, Huazhe3; Shahzad, M. Babar1; Qi, Yang2,4 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2019-07-15 |
| 卷号 | 793页码:295-301 |
| 关键词 | Non-polar preferred orientation Sb-doped ZnO film Homojunction P-type conduction Acceptor-type defects |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2019.04.109 |
| 通讯作者 | Shahzad, M. Babar() ; Qi, Yang(qiyang@imp.neu.edu.cn) |
| 英文摘要 | A novel fabrication of non-polar Sb-doped ZnO homojunction was realized via a facile and reproducible low-temperature aqueous solution deposition in the presence of Sb dopant dissolved in ethylene glycol (EG). The undoped non-polar ZnO films were introduced as the non-polar substrates for the non-polar growth of Sb-doped ZnO film as well as the SZO/ZnO homojunction. The parameters including the reaction time and dopant concentration for the synthesis of non-polar SZO/ZnO homojunction were identified. The existence and distribution of Sb dopant in SZO layer were confirmed by X-ray photoelectron spectroscopy (XPS) and elemental mapping analysis. The I-V measurement result indicated the p-type conduction of SZO layer and the synthesized p-SZO/n-ZnO homojunction with non-polar preferred orientations possessed both ultra-low turn-on voltage (1.5 V) and large rectification rate (>10(5)). The excitation of orange-red light emissions from deep-level energy band gap demonstrated the (Sb-Zn-xV(Zn)) complex defect pattern. This novel non-polar SZO/ZnO homojunction could be an excellent candidate for the applications of one-dimensional ZnO nanomaterials in the electronic/photoelectronic field. (C) 2019 Elsevier B.V. All rights reserved. |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000467696000033 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://ir.imr.ac.cn/handle/321006/133326]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Shahzad, M. Babar; Qi, Yang |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.Northeastern Univ, Inst Mat Phys & Chem, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China 3.China Med Univ, Dept Biophys, Sch Fundamental Sci, Shenyang 110122, Liaoning, Peoples R China 4.Northeastern Univ, Key Lab Anisotropy & Texture Mat, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qi, Lin,Chai, Zhaoyuan,Yang, Huazhe,et al. A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,793:295-301. |
| APA | Qi, Lin,Chai, Zhaoyuan,Yang, Huazhe,Shahzad, M. Babar,&Qi, Yang.(2019).A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission.JOURNAL OF ALLOYS AND COMPOUNDS,793,295-301. |
| MLA | Qi, Lin,et al."A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission".JOURNAL OF ALLOYS AND COMPOUNDS 793(2019):295-301. |
入库方式： OAI收割
来源：金属研究所
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