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Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates

文献类型：期刊论文

作者Wei, Shijing1,4,5,6; Ma, Lai-Peng4; Chen, Mao-Lin3,4; Liu, Zhibo4; Ma, Wei3,4; Sun, Dong-Ming3,4; Cheng, Hui-Ming2,3,4,5; Ren, Wencai4
刊名CARBON
出版日期2019-07-01
卷号148页码:241-248
ISSN号0008-6223
DOI10.1016/j.carbon.2019.03.083
通讯作者Cheng, Hui-Ming(cheng@imr.ac.cn) ; Ren, Wencai(wcren@imr.ac.cn)
英文摘要Metal-free growth of high-quality monolayer graphene films by chemical vapor deposition (CVD) on dielectric substrates is of great significance for the development of high-performance graphene-based electronic and optoelectronic devices. However, the existing CVD processes suffer from poor structural uniformity (or growth quality) and/or a slow growth rate due to the negligible catalytic activity of dielectric substrates. Here, we report a water-assisted CVD process for rapid growth of monolayer graphene film on SiO2/Si substrate without using metal catalysts or ultra-high temperature. Even trace amount of water enables the preferential formation of monolayer graphene films with significantly reduced structural defects. Particularly, this strategy enables the rapid growth of monolayer graphene by effectively lowering the growth kinetic barrier. We attribute the benefits of water on simultaneously improving the structural uniformity and growth rate to its mild oxidative effect and the role in accelerating the release of oxygen from the SiO2/Si substrate, respectively. Our work provides helpful information for efficient and controllable CVD growth of high-quality graphene on dielectric substrates. (C) 2019 Elsevier Ltd. All rights reserved.
资助项目Ministry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001104] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; National Science Foundation of China[51272256] ; National Science Foundation of China[61422406] ; National Science Foundation of China[61574143] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Chinese Academy of Sciences[XDPB06] ; Strategic Priority Research Programof Chinese Academy of Sciences[XDB30000000]
WOS研究方向Chemistry ; Materials Science
语种英语
WOS记录号WOS:000468421900026
出版者PERGAMON-ELSEVIER SCIENCE LTD
资助机构Ministry of Science and Technology of China ; National Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Programof Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/133358]  
专题金属研究所_中国科学院金属研究所
通讯作者Cheng, Hui-Ming; Ren, Wencai
作者单位1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
2.Tsinghua Univ, Shenzhen Geim Graphene Ctr, TBSI, Shenzhen 518055, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
4.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
6.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Wei, Shijing,Ma, Lai-Peng,Chen, Mao-Lin,et al. Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates[J]. CARBON,2019,148:241-248.
APA Wei, Shijing.,Ma, Lai-Peng.,Chen, Mao-Lin.,Liu, Zhibo.,Ma, Wei.,...&Ren, Wencai.(2019).Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates.CARBON,148,241-248.
MLA Wei, Shijing,et al."Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates".CARBON 148(2019):241-248.

入库方式： OAI收割

来源：金属研究所

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