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Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit

文献类型：期刊论文

作者Wang, Cheng2,3; Chen, Long1; Liu, Zhen2,3; Liu, Zhibo1; Ma, Xiu-Liang1; Xu, Chuan1; Cheng, Hui-Ming1; Ren, Wencai1; Kang, Ning2,3
刊名ADVANCED ELECTRONIC MATERIALS
出版日期2019-04-01
卷号5期号:4页码:7
关键词2D materials 2D transition metal carbides cryogenic temperatures topological semimetal
ISSN号2199-160X
DOI10.1002/aelm.201800839
通讯作者Ren, Wencai(wcren@imr.ac.cn) ; Kang, Ning(nkang@pku.edu.cn)
英文摘要Recent theoretical calculations and spectroscopy measurements have shown that several materials with the tungsten carbide-type structure, such as molybdenum phosphide and tungsten carbide (WC), are a new type of topological semimetal hosting triply degenerate nodal points. So far, most of experimental studies are performed on large-size bulk crystal. 2D nano structures, with large surface-to-volume ratio, are expected to provide an attractive system for probing topological surface states and the development of device applications. Here the transport characterization of high-quality ultrathin WC single crystals is reported. The magnetoresistance (MR) shows a strong anisotropic behavior, which may be attributed to the transport anomalies of three-component fermions as theoretically proposed. The scaling analysis reveals the presence of the surface states in WC. The observation of the nonsaturating MR in strong magnetic fields, together with nonlinear and strong temperature dependent Hall effect, is consistent with the proposed multiple bands character of carriers in WC. In addition, a low-temperature upturn in the resistance is observed, indicating that electron electron interaction plays a prominent role in charge transport. The results demonstrate that the ultrathin WC crystals offer a potential platform for exploring exotic transport properties arising from the three-component fermions in the 2D limit.
资助项目National Natural Science Foundation of China[11774005] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Key Research and Development Program of China[2016YFA0300601] ; National Key Research and Development Program of China[2017YFA0303304] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000468314900003
出版者WILEY
资助机构National Natural Science Foundation of China ; National Key Research and Development Program of China ; Strategic Priority Research Program of Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/133617]  
专题金属研究所_中国科学院金属研究所
通讯作者Ren, Wencai; Kang, Ning
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
3.Peking Univ, Dept Elect, Beijing 100871, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Cheng,Chen, Long,Liu, Zhen,et al. Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(4):7.
APA Wang, Cheng.,Chen, Long.,Liu, Zhen.,Liu, Zhibo.,Ma, Xiu-Liang.,...&Kang, Ning.(2019).Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.ADVANCED ELECTRONIC MATERIALS,5(4),7.
MLA Wang, Cheng,et al."Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit".ADVANCED ELECTRONIC MATERIALS 5.4(2019):7.

入库方式： OAI收割

来源：金属研究所

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