On-Demand Preparation of alpha-Phase-Dominated Tungsten Films for Highly Qualified Thermal Reflectors
文献类型:期刊论文
作者 | Wang, Xiaoyu6; Zang, Rui6; Gao, Junhua6; Liu, Chen1; Wang, Lei1; Gong, Wenbin2; Zha, Xianhu4; Chen, Xingqiu1; Huang, Feng4; Javaid, Kashif6 |
刊名 | ADVANCED MATERIALS INTERFACES
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出版日期 | 2019-06-01 |
卷号 | 6期号:11页码:12 |
关键词 | first-principles calculation infrared reflectance phase transformation resistivity thermal reflector tungsten thin film |
ISSN号 | 2196-7350 |
DOI | 10.1002/admi.201900031 |
通讯作者 | Gao, Junhua(gaojunhua@nimte.ac.cn) ; Cao, Hongtao(h_cao@nimte.ac.cn) |
英文摘要 | Phase-structure diversity affords tungsten thin films with fascinating physical/chemical properties for varied applications. However, the on-demand preparation of W films with specific phase is still an important but unmet scientific issue. In this report, an easy-to-achieve preparation recipe is implemented for addressing the phase tailoring of tungsten films. The phase transformation evolution during deposition is governed by enhanced diffusion of W adatoms and selective atomic etching on the crystal planes. It is experimentally demonstrated that the orientation relation between {210}(beta) and {110}(alpha) planes plays a vital role in coupling with the competitive growth behaviors between beta- and alpha-W. The phase-dependent electrical/optical properties of W films are experimentally observed and unambiguously figured out by theoretical simulations. Alpha-phase-dominated W films are prepared successfully under relatively tolerant conditions, demonstrating a low resistivity of approximate to 13.6 mu omega cm and a high infrared reflectance larger than 93%. Alpha-W also serves as thermal reflector to construct a solar absorber, exhibiting a low thermal emissivity of approximate to 9.8%@500 degrees C. Understanding the (alpha, beta) phase transformation mechanism means a big step forward in the development of the on-demand preparation, which allows to build a scalable platform for making W films with specific phase in a more controllable way. |
资助项目 | Natural Science Foundation of Zhejiang Province[LY17E020012] ; Key Research and Development Plan of Jiangsu Province[BE2015049] ; program for Ningbo Municipal Science and Technology Innovative Research Team[2016B10005] ; National Nature Science Foundation of China[51671193] |
WOS研究方向 | Chemistry ; Materials Science |
语种 | 英语 |
WOS记录号 | WOS:000471079000015 |
出版者 | WILEY |
资助机构 | Natural Science Foundation of Zhejiang Province ; Key Research and Development Plan of Jiangsu Province ; program for Ningbo Municipal Science and Technology Innovative Research Team ; National Nature Science Foundation of China |
源URL | [http://ir.imr.ac.cn/handle/321006/133916] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Gao, Junhua; Cao, Hongtao |
作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China 3.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Engn Lab Nucl Energy Mat, Ningbo 315201, Zhejiang, Peoples R China 5.Francisk Skorina Gomel State Univ, Gomel 246019, BELARUS 6.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Graphene Technol & Applicat Zhejiang Prov, Ningbo 315201, Zhejiang, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Xiaoyu,Zang, Rui,Gao, Junhua,et al. On-Demand Preparation of alpha-Phase-Dominated Tungsten Films for Highly Qualified Thermal Reflectors[J]. ADVANCED MATERIALS INTERFACES,2019,6(11):12. |
APA | Wang, Xiaoyu.,Zang, Rui.,Gao, Junhua.,Liu, Chen.,Wang, Lei.,...&Rogachev, Alexander A..(2019).On-Demand Preparation of alpha-Phase-Dominated Tungsten Films for Highly Qualified Thermal Reflectors.ADVANCED MATERIALS INTERFACES,6(11),12. |
MLA | Wang, Xiaoyu,et al."On-Demand Preparation of alpha-Phase-Dominated Tungsten Films for Highly Qualified Thermal Reflectors".ADVANCED MATERIALS INTERFACES 6.11(2019):12. |
入库方式: OAI收割
来源:金属研究所
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